Microelectronic devices and methods for filling vias in microelectronic devices

ABSTRACT

Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/583,500, filed May 1, 2017; which is a continuation of U.S. patentapplication Ser. No. 14/300,004, filed Jun. 9, 2014, now U.S. Pat. No.9,653,420; which is a continuation of U.S. patent application Ser. No.13/337,943, filed Dec. 27, 2011, now U.S. Pat. No. 8,748,311; which is adivisional of U.S. patent application Ser. No. 10/733,226, filed Dec.10, 2003, now U.S. Pat. No. 8,084,866; each of which is incorporatedherein by reference in its entirety.

This application is related to U.S. patent application Ser. No.10/713,878 filed Nov. 13, 2003, now U.S. Pat. No. 7,091,124, entitledMICROELECTRONIC DEVICES, METHODS FOR FORMING VIAS IN MICROELECTRONICDEVICES, AND METHODS FOR PACKAGING MICROELECTRONIC DEVICES, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The following disclosure relates generally to microelectronic devicesand, more particularly, to methods for filling vias in microelectronicworkpieces.

BACKGROUND

Conventional packaged microelectronic devices can include a singulatedmicroelectronic die, an interposer substrate or lead frame attached tothe die, and a moulded casing around the die. The die generally includesan integrated circuit and a plurality of bond-pads coupled to theintegrated circuit. The bond-pads are typically coupled to terminals onthe interposer substrate or lead frame, and serve as external electricalcontacts on the die through which supply voltage, signals, etc., aretransmitted to and from the integrated circuit. In addition to theterminals, the interposer substrate can also include ball-pads coupledto the terminals by conductive traces supported in a dielectricmaterial. Solder balls can be attached to the ball-pads in one-to-onecorrespondence to define a “ball-grid array.” Packaged microelectronicdevices with ball-grid arrays are generally higher grade packages havinglower profiles and higher pin counts than conventional packages usinglead frames.

Packaging processes for conventional microelectronic devices typicallyinclude (a) cutting the wafer to separate or singulate the dies, (b)attaching the individual dies to an interposer substrate, (c)wire-bonding the bond-pads of the dies to the terminals of theinterposer substrate, and (d) encapsulating the dies with a suitablemolding compound. One challenge of conventional packaging processes isthat mounting the individual dies to interposer substrates or leadframes is time-consuming and expensive. Another challenge is formingwire-bonds that can withstand the forces of the molding compound duringencapsulation; this issue is particularly problematic as the wire-bondsbecome smaller to accommodate higher pin counts and smaller packages.Yet another challenge of conventional packaging processes is thatattaching individual dies to interposer substrates or lead frames maydamage the bare dies. As such, processes for packaging the dies hasbecome a significant factor in manufacturing microelectronic devices.

Another process for packaging microelectronic devices is wafer-levelpackaging. In this process, a plurality of microelectronic dies areformed on a wafer, and then a redistribution layer is formed over thedies. The redistribution layer can include a dielectric layer and aplurality of exposed ball-pads forming arrays on the dielectric layer.Each ball-pad array is typically arranged over a corresponding die, andthe ball-pads in each array are coupled to corresponding bond-pads ofthe die by conductive traces extending through the dielectric layer.After forming the redistribution layer on the wafer, discrete masses ofsolder paste are deposited onto the individual ball-pads. The solderpaste is then reflowed to form small solder balls or “solder bumps” onthe ball-pads. After forming the solder balls, the wafer is singulatedto separate the individual microelectronic devices from each other.

Wafer-level packaging is a promising development for increasingefficiency and reducing the cost of microelectronic devices. By“pre-packaging” individual dies with a redistribution layer beforecutting the wafers to singulate the dies, sophisticated semiconductorprocessing techniques can be used to form smaller arrays of solderballs. Additionally, wafer-level packaging is an efficient process thatsimultaneously packages a plurality of dies, thereby reducing costs andincreasing throughput.

Packaged microelectronic devices such as those described above are usedin cellphones, pagers, personal digital assistants, computers, and manyother electronic products. To meet the demand for smaller electronicproducts, there is a continuing drive to increase the performance ofpackaged microelectronic devices, while at the same time reducing theheight and the surface area or “footprint” of such devices on printedcircuit boards. Reducing the size of high performance devices, however,is difficult because the sophisticated integrated circuitry requiresmore bond-pads, which results in larger ball-grid arrays and thus largerfootprints. One technique for increasing the component density ofmicroelectronic devices within a given footprint is to stack one deviceon top of another.

FIG. 1 schematically illustrates a first microelectronic device 10attached to a second microelectronic device 20 in a wire-bonded,stacked-die arrangement. The first microelectronic device 10 includes adie 12 having an integrated circuit 14 electrically coupled to a seriesof bond-pads 16. A redistribution layer 18 electrically couples aplurality of first solder balls 11 to corresponding bond-pads 16. Thesecond microelectronic device 20 similarly includes a die 22 having anintegrated circuit 24 electrically coupled to a series of bond-pads 26.A redistribution layer 28 electrically couples a plurality of secondsolder balls 21 to corresponding bond-pads 26. Wire-bonds 13 extendingfrom the first solder balls 11 to the second solder balls 21electrically couple the first microelectronic device 10 to the secondmicroelectronic device 20.

The second solder balls 21 on the second microelectronic device 20 arepositioned outboard of the first microelectronic device 10 to facilitateinstallation of the wire-bonds 13. Positioning the second solder balls21 in this manner undesirably increases the footprint of the stacked-diearrangement. In addition, installation of the wire-bonds 13 can be acomplex and/or expensive process because it requires placing individualwires between each pair of solder balls. Further, this type ofinstallation may not be feasible for the high-density, fine-pitch arraysof some high-performance devices because the solder balls are not spacedapart far enough to be connected to individual wire-bonds.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically illustrates a first microelectronic device attachedto a second microelectronic device in a stacked-die arrangement inaccordance with the prior art.

FIG. 2 is a cut-away isometric view of a microfeature workpiececonfigured in accordance with an embodiment of the invention.

FIG. 3 is a schematic cross-sectional view of the microfeature workpieceof FIG. 2 taken substantially along line 3-3 in FIG. 2.

FIG. 4 is a schematic cross-sectional view illustrating a method offorming a conductive interconnect in a microelectronic device inaccordance with an embodiment of the invention.

FIGS. 5A-5B are schematic cross-sectional views illustrating variousstages in a method of forming a conductive interconnect in amicroelectronic device in accordance with another embodiment of theinvention.

FIGS. 6A-6D are schematic cross-sectional views illustrating variousstages in a method of forming a conductive interconnect in amicroelectronic device in accordance with a further embodiment of theinvention.

FIGS. 7A-7B are schematic cross-sectional views illustrating variousstages in a method of forming a conductive interconnect in amicroelectronic device in accordance with yet another embodiment of theinvention.

FIGS. 7C-7D are schematic cross-sectional views illustrating variousstages in a method of forming a bond-pad electrically coupled to theconductive interconnect of FIG. 7B.

FIG. 8 is a schematic cross-sectional view illustrating a method offorming a conductive interconnect in a microelectronic device usingsolder tent technology in accordance with a further embodiment of theinvention.

FIG. 9 is a schematic cross-sectional view illustrating amicroelectronic device set configured in accordance with an embodimentof the disclosure.

DETAILED DESCRIPTION A. Overview

The following disclosure describes several embodiments ofmicroelectronic devices, methods for packaging microelectronic devices,and methods for filling vias in dies and other substrates to formconductive interconnects. One aspect of the invention is directed towarda method of forming a conductive interconnect in a microelectronicdevice. In one embodiment, the method includes providing a microfeatureworkpiece having a plurality of dies and at least one passage extendingthrough the microfeature workpiece from a first side of the microfeatureworkpiece to an opposite second side of the microfeature workpiece. Themethod can further include forming a conductive plug in the passageadjacent to the first side of the microelectronic workpiece. Aconductive material is then deposited in the passage to at leastgenerally fill the passage from the conductive plug to the second sideof the microelectronic workpiece.

In one aspect of this embodiment, forming a conductive plug in thepassage can include depositing an electrically conductive material inthe passage using a maskless mesoscale materials deposition process. Inanother embodiment, forming the conductive plug can include applying anelectronic ink in the passage using an electronic printing process. In afurther embodiment, forming the conductive plug can include depositingan electrically conductive material in the passage using a nano-particledeposition process.

A further aspect of the invention is directed toward another method offorming a conductive interconnect in a microelectronic device. In oneembodiment, this method includes providing a microfeature workpiecehaving a plurality of dies and at least one passage extending throughthe microfeature workpiece from a first side of the microfeatureworkpiece to an opposite second side of the microfeature workpiece. Thepassage can define a first opening in the first side of the microfeatureworkpiece and a second opening in the second side of the microfeatureworkpiece. The method can further include applying a sealing layer tothe first side of the microfeature workpiece to at least generally sealthe first opening of the passage. A first portion of conductive materialcan then be deposited through the second opening of the passage to forma plug in the passage adjacent to the sealing layer. After the plug hasbeen formed, a second portion of conductive material can be depositedthrough the second opening of the passage to at least generally fill thepassage from the plug to the second side of the microelectronicworkpiece.

Many specific details of the present invention are described below withreference to semiconductor devices. The term “microfeature workpiece,”however, as used throughout this disclosure includes substrates uponwhich and/or in which microelectronic devices, micromechanical devices,data storage elements, read/write components, and other features arefabricated. For example, such microelectronic workpieces can includesemiconductor wafers (e.g., silicon or gallium arsenide wafers), glasssubstrates, insulated substrates, and many other types of substrates.The feature signs in microfeature workpieces can include very smallfeatures of 0.11 μm or less, but larger features are also included onmicrofeature workpieces.

Specific details of several embodiments of the invention are describedbelow with reference to microelectronic dies and other microelectronicdevices in order to provide a thorough understanding of suchembodiments. Other details describing well-known structures oftenassociated with microelectronic devices are not set forth in thefollowing description to avoid unnecessarily obscuring the descriptionof the various embodiments. Persons of ordinary skill in the art willunderstand, however, that the invention may have other embodiments withadditional elements or without several of the elements shown anddescribed below with reference to FIGS. 2-8.

In the Figures, identical reference numbers identify identical or atleast generally similar elements. To facilitate the discussion of anyparticular element, the most significant digit or digits of anyreference number refer to the Figure in which that element is firstintroduced. For example, element 210 is first introduced and discussedwith reference to FIG. 2.

B. Embodiments of Microfeature Workpieces

FIG. 2 is a cut-away isometric view of a wafer or microfeature workpiece200 configured in accordance with an embodiment of the invention. In oneaspect of this embodiment, the microfeature workpiece 200 includes afront side 201, a back side 202, and a plurality of microelectronicdevices 210 (identified individually as microelectronic devices 210a-f). Each microelectronic device 210 can include a microelectronic die212 having an integrated circuit 214 (shown schematically), and aplurality of metallic and/or conductive bond-pads 216 electricallycoupled to the integrated circuit 214. The microfeature workpiece 200can further include a passivation layer 240 covering the front side 201of the die 212 except for openings 218 at each of the bond-pads 216.

In the embodiment illustrated in FIG. 2, the processing of themicroelectronic devices 210 has not been completed. As described belowwith reference to FIGS. 3-7B, additional processing can be carried outon the microfeature workpiece 200 to configure or package the individualmicroelectronic devices 210 for use in an electronic device or product.After this additional processing is complete, the microfeature workpiece200 can be cut along lines A₁-A₁ to singulate the microelectronicdevices 210.

FIG. 3 is a schematic cross-sectional view of the microelectronic device210 b taken substantially along line 3-3 in FIG. 2 in accordance with anembodiment of the invention. The microelectronic device 210 b isinverted in FIG. 3 for purposes of illustration, and it has undergoneadditional processing beyond that illustrated in FIG. 2. For example, inone aspect of this embodiment, the microelectronic device 210 b includesa via or passage 342 extending through the die 212 and the bond-pad 216.The passage 342 and the opening 218 define a first opening 346 in thefront side 201 of the microfeature workpiece 200, and a second opening348 in the back side 202. In one embodiment, the passage 342 can beformed using a laser-cutting method at least generally similar to one ormore of the methods described in U.S. patent application Ser. No.10/713,878. In other embodiments, the passage 342 can be formed usingother methods, such as a suitable etching or drilling method. Although,in one embodiment, the passage 342 may be slightly tapered as depictedin FIG. 3, in other embodiments, the passage 342 can be straight or atleast approximately straight.

After the passage 342 has been formed, a dielectric layer 344 can beapplied to the inner wall of the passage 342. In one embodiment, thedielectric layer 344 is an oxide applied in a low temperature chemicalvapor deposition (CVD) process. In other embodiments, the dielectriclayer 344 is a polyamide material or other materials suitable forinsulating the die 212 from electrical leakage after the passage 342 hasbeen filled with conductive metal (not shown) as described in greaterdetail below.

FIG. 4 is a schematic cross-sectional view illustrating a method offorming a conductive interconnect in the microelectronic device 210 b ofFIG. 3 in accordance with an embodiment of the invention. In one aspectof this embodiment, a conductive element 450 is positioned against thepassivation layer 240 so that a contact surface 451 at least generallycovers the first opening 346 of the passage 342. Once the conductiveelement 450 is in this position, the passage 342 can be filled withconductive material 445 to form a conductive interconnect 446 extendingthrough the microelectronic device 210 b. For example, in oneembodiment, the conductive element 450 is a conductive polymer that canbe biased at an electrical potential to electroplate the conductivematerial 445 in the passage 342. The conductive material 445 can becopper or other conductive metals, such as silver, gold, palladium, etc.In still further embodiments, other conductive materials that can bedeposited at low temperatures of 250° C. or less to fill the passage342.

One shortcoming associated with the method described above withreference to FIG. 4 is that occasionally the conductive element 450allows some of the conductive material 445 to leak out of the firstopening 346 and flow between the contact surface 451 and the passivationlayer 240. This leaked material can extend between two or more bond-pads216 (FIG. 2) and cause undesirable shorting between the bond-pads 216.

FIGS. 5A-5B are schematic cross-sectional views illustrating variousstages in a method of forming a conductive interconnect in themicroelectronic device 210 b of FIG. 3 in accordance with anotherembodiment of the invention. Referring first to FIG. 5A, this methodstarts with the microelectronic device 210 b configured as shown in FIG.3. From there, a conductive plug 560 is formed in the passage 342adjacent to the bond-pad 216. The conductive plug 560 can be formed withconductive material that fills a portion of the passage 342 andelectrically couples to an exposed surface of the bond-pad 216 that isnot insulated by the dielectric layer 344. In one embodiment, theconductive plug 560 can be formed by depositing an electricallyconductive material in the passage 342 using a maskless mesoscalematerials deposition process. One such process includes the M³Dtechnology offered by Optomec, Inc., of 3911 Singer Boulevard NE,Albuquerque, N. Mex. 87109. In other embodiments, the conductive plug560 can be formed using other suitable methods. For example, in oneother embodiment, the conductive plug 560 can include an electronic inkapplied to the passage 342 using an electronic printing process. In yetother embodiments, the conductive plug 560 can be formed by depositingelectrically conductive material in the passage 342 using anano-particle deposition process. In any of the foregoing embodiments,the conductive plug 560 can include silver. In other embodiments, theconductive plug 560 can include other electrically conductive materials,such as gold, copper, palladium and/or various solders. Such materialscan include those that can be deposited and/or printed in a conductiveink or paste at a low temperature, such as 250° C. or less.

Referring next to FIG. 5B, after the conductive plug 560 is in place,the remaining portion of the passage 342 can be filled with a conductivematerial 545 to form a conductive interconnect 546 extending through themicroelectronic device 210 b. For example, in one embodiment theconductive plug 560 can serve as an electrode for electroplating thepassage 342 with a suitable material, such as copper. In thisembodiment, a conductive element 550 is positioned against theconductive plug 560 and biased at an electrical potential toelectroplate the conductive material 545 within the passage 342. Inother embodiments, other methods can be used to bias the conductive plug560 at an electrical potential suitable for electroplating material intothe passage 342.

FIGS. 6A-6D are schematic cross-sectional views illustrating variousstages in a method of forming a conductive interconnect in amicroelectronic device 610 in accordance with an embodiment of theinvention. Referring first to FIG. 6A, the microelectronic device 610can include a die 612 having a through-hole or passage 642. The passage642 defines a first opening 636 in a first side 601 of themicroelectronic device 610 and a second opening 638 in a second side602. A passivation layer 644 covers the die 612 including the inner wallof the passage 642. In one embodiment, the passivation layer 644 can betetraethylorthosilicate (TEOS) deposited using a low temperature CVDprocess. In other embodiments, the passivation layer 644 can be paryleneand/or other suitable materials, such as silicon dioxide (SiO₂) orsilicon nitrite (Si₃N₄). The foregoing list of passivation and/ordielectric material options is not exhaustive. Accordingly, in otherembodiments, it is expected that other suitable materials and processescan be used to form one or more of the passivation and/or dielectriclayers discussed herein.

Referring next to FIG. 6B, a tape, film, or other type of suitablesealing layer 670 can be temporarily applied to the die 612 to at leastgenerally seal the first opening 636 of the passage 642. After the firstopening 636 has been sealed, a first portion of conductive material isdeposited through the second opening 638 to form a plug 660 in thepassage 642 adjacent to the sealing layer 670. In one embodiment,forming the plug 660 can include depositing an electrically conductivematerial in the passage using a maskless mesoscale materials depositionprocess as described above with reference to FIG. 5A. In anotherembodiment, forming the plug 660 can include applying an electronic inkin the passage 642 using an electronic printing process. In yet anotherembodiment, forming the plug 660 can include depositing an electricallyconductive material in the passage 642 using a nano-particle depositionprocess to deposit silver or other suitable metal.

As shown in FIG. 6C, the sealing layer 670 (FIG. 6B) is removed from themicroelectronic device 610, and a conductive element 650 is positionedagainst the microelectronic device 610 so that a contact surface 651makes electrical contact with the plug 660. As described above withreference to the embodiments shown in FIGS. 4 and 5B, the conductiveelement 650 can include an electrode configured to bias the plug 660 atan electrical potential for electroplating the passage 642 with a secondportion of conductive material 645 to form a conductive interconnect 646extending through the microelectronic device 610.

Referring to FIG. 6D, after the conductive interconnect 646 has beenformed, additional processing steps can be carried out to package themicroelectronic device 610 for use in a microelectronic device set. Sucha microelectronic set can include a set having a stacked-diearrangement. In one embodiment, such processing steps can includeremoving the passivation layer 644 (FIG. 6A) from a first surface 631 ofthe die 612, and forming a bond-pad 616 on the die 612 electricallycoupled to the conductive interconnect 646. In other embodiments, otherprocessing steps can be employed to configure the microelectronic device610 in a suitable form for subsequent use in a microelectronic deviceset or product.

FIGS. 7A-7B are schematic cross-sectional views illustrating variousstages in a method of forming a conductive interconnect in themicroelectronic device 610 in accordance with an embodiment of theinvention that is similar to the embodiment described above withreference to FIGS. 6A-6D. In one aspect of this embodiment as shown inFIG. 7A, after the plug 660 is formed in the passage 642, the sealinglayer 670 (FIG. 6B) is removed and a metallic layer 780 is deposited onthe passivation layer 644 in electrical contact with the plug 660. Inone embodiment, the metallic layer 780 can be a metal layer formed byphysical vapor deposition (PVD). In other embodiments, the metalliclayer 780 can include other materials formed by other processes, such asa suitable CVD process.

Referring next to FIG. 7B, after the metallic layer 780 has beendeposited on the microelectronic device 610, the conductive element 650is positioned against the metallic layer 780. As discussed above, theconductive element 650 can be a plate electrode or a conductive polymerconfigured to apply an electrical bias to the metallic layer 780, whichin turn biases the plug 660. The conductive element 650, however, can bea finger type contact as shown in U.S. Pat. No. 6,080,291, which isherein incorporated by reference. Electrically biasing the plug 660facilitates electroplating a second portion of conductive material 745in the passage 642 adjacent to the plug 660. Together, the plug 660 andthe second portion of conductive material 745 form a conductiveinterconnect 746 extending through the microelectronic device 610.

FIGS. 7C-7D are schematic cross-sectional views illustrating variousstages in a method of forming a bond-pad electrically coupled to theplug 660 in accordance with an embodiment of the invention. In oneaspect of this embodiment as shown in FIG. 7C, a resist layer 790 isformed on the metallic layer 780, and an opening 718 is formed in theresist layer 790 adjacent to the plug 660. A metallic portion 792 isthen deposited on the metallic layer 780 through the opening 718 byusing the metallic layer 780 as a seed layer. After depositing themetallic portion 792, the resist layer 790 is removed as shown in FIG.7D. In addition, all of the metallic layer 780, except for the portionunder the metallic portion 792, is also removed (for example, by asuitable etching process). Together, the remaining metallic layer 780and metallic portion 792 form a bond-pad 716 electrically coupled to theplug 660. Although the foregoing discussion describes one method forforming a bond-pad on the microelectronic device 610, in otherembodiments, other methods can be used to form bond-pads electricallycoupled to the plug 660.

FIG. 8 is a schematic cross-sectional view illustrating a method offorming a conductive interconnect in the microelectronic device 210 b ofFIG. 3 using solder tent technology in accordance with a furtherembodiment of the invention. This method starts with the microelectronicdevice 210 b configured as shown in FIG. 3. From there, a metallicmaterial 868 is applied to the bond pad 216 by plating or anothersuitable process. In one aspect of this embodiment, the bond pad 216 canbe Aluminum (Al) and the metallic material 868 can be Nickel (Ni) thatacts as a wetting agent to help subsequent material applications adhereto the bond pad 216. After the metallic material 868 has been applied, aconductive plug 860 is formed to fill a portion of the passage 342 andelectrically couple to the bond-pad 216. In one embodiment, theconductive plug 860 can be formed by depositing an electricallyconductive material in the passage 342 using solder tent technology. Inthis embodiment, the conductive plug can include Tin-Lead (SnPb),Tin-Silver-Copper (SnAgCu), Tin-Cu (SnCu), or Tin-Silver (SnAg)material, among others. After the conductive plug 860 is in place, theremaining portion of the passage 342 can be filled with a conductivematerial using one or more of the methods described above (such as themethod described above with reference to FIG. 5B) to form a conductiveinterconnect 846 extending through the microelectronic device 210 b.

FIG. 9 schematically illustrates a microelectronic device set comprisedof the first microelectronic device 210 b and a second microelectronicdevice 920. In the illustrated embodiment, the second microelectronicdevice 920 includes a second die 912 with a second integrated circuit914 electrically coupled to a second bond-pad 916. The second bond pad916 can be electrically coupled to the conductive interconnect 546 andthe first bond pad 216 by, for example, re-melting or reflowing aportion of the conductive plug 560 and/or using other suitableconnection methods known in the art.

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thespirit and scope of the invention. Accordingly, the invention is notlimited except as by the appended claims.

1.-20. (canceled)
 21. A method of forming a conductive interconnect in amicroelectronic device, the method comprising: providing a die having afirst side and a second side opposite to the first side, the die furtherhaving a bond-pad positioned on the first side; forming a passagecompletely through the die and the bond-pad; depositing an insulativelayer in the passage; depositing a first conductive material in a firstportion of the passage adjacent to the first side of the die to form aconductive plug electrically connected to the bond-pad, wherein thefirst conductive material directly contacts the insulative layer betweenthe first side of the die and the second side of the die; and afterdepositing the first conductive material, depositing a second conductivematerial in a second portion of the passage in contact with theconductive plug to at least generally fill the passage from theconductive plug to the second side of the die, wherein the secondconductive material directly contacts the insulative layer between thefirst side of the die and the second side of the die.
 22. The method ofclaim 21 wherein depositing an insulative layer includes depositing aninsulative layer in the passage between the die and the first conductivematerial and between the die and the second conductive material.
 23. Themethod of claim 21 wherein depositing a first conductive materialincludes depositing an electronic ink.
 24. The method of claim 21wherein depositing a first conductive material includes a nano-particledeposition.
 25. The method of claim 21 wherein depositing a secondconductive material in a second portion of the passage includes biasingthe conductive plug at an electrical potential.
 26. A method of forminga conductive interconnect in a microfeature workpiece, the microfeatureworkpiece having a first side, a second side opposite to the first side,a bond-pad formed on the first side, and at least one die, the methodcomprising: forming a passage completely through the bond-pad and thedie from the first side of the microfeature workpiece to the second sideof the microfeature workpiece; depositing an insulative layer in thepassage; depositing a first conductive material in a first portion ofthe passage adjacent to the first side of the microfeature workpiece toform a conductive plug in contact with the bond-pad, wherein the firstconductive material directly contacts the insulative layer between thefirst side of the microfeature workpiece and the second side of themicrofeature workpiece; and after depositing the first conductivematerial in the first portion of the passage, depositing a secondconductive material in a second portion of the passage in contact withthe conductive plug to at least generally fill the passage from theconductive plug to the second side of the microfeature workpiece,wherein the second conductive material directly contacts the insulativelayer between the first side of the microfeature workpiece and thesecond side of the microfeature workpiece, and wherein the secondconductive material is different than the first conductive material. 27.The method of claim 26 wherein depositing the first conductive materialincludes depositing an electronic ink.
 28. The method of claim 26wherein depositing the first conductive material includes anano-particle deposition.
 29. The method of claim 26 wherein depositingan insulative layer includes depositing an insulative layer in thepassage between the die and the first conductive material and betweenthe die and the second conductive material.
 30. The method of claim 26,further comprising forming a metallic layer on the first side of themicrofeature workpiece.
 31. The method of claim 26, further comprisingforming the bond-pad on the die.
 32. A method of forming amicroelectronic device set having a first microelectronic device and asecond microelectronic device, the first microelectronic device having afirst die with a first integrated circuit and a first bond-padelectrically coupled to the first integrated circuit, the secondmicroelectronic device having a second die with a second integratedcircuit and a second bond-pad electrically coupled to the secondintegrated circuit, the method comprising: forming a passage completelythrough the first die and the first bond-pad; depositing a firstconductive material in a first portion of the passage to form aconductive plug electrically connected to the bond pad, the conductiveplug in direct contact with an inner wall of the passage and having aboundary in the passage; after depositing the first conductive material,depositing a second conductive material in a second portion of thepassage in direct contact with the inner wall of the passage and theboundary of the conductive plug to at least generally fill the passage;and electrically coupling the conductive interconnect to the secondbond-pad of the second microelectronic device.
 33. The method of claim32 wherein forming a passage completely through the first die and thefirst bond-pad includes forming a passage having an insulative layerthat defines the inner wall of the passage, wherein the insulative layeris deposited between the first die and the first conductive material andbetween the first die and the second conductive material.
 34. The methodof claim 32 wherein depositing a second conductive material in a secondportion of the passage includes biasing the conductive plug at anelectrical potential.
 35. The method of claim 32 wherein electricallycoupling the conductive interconnect of the first microelectronic deviceto the second bond-pad of the second microelectronic device includesattaching the first microelectronic device to the second microelectronicdevice in a stacked-die arrangement.
 36. The method of claim 32 whereinelectrically coupling the conductive interconnect of the firstmicroelectronic device to the second bond-pad of the secondmicroelectronic device includes depositing a solder ball between theconductive interconnect and the second bond-pad.
 37. The method of claim32 wherein the passage is a first passage, and wherein the methodfurther comprises: forming a second passage through the second die andthe second bond-pad; and filling the second passage with a thirdconductive material.
 38. The method of claim 32, further comprisingforming a redistribution layer on the first die, the redistributionlayer including a conductive line having a first end portion attached tothe first bond-pad and a second end portion positioned outward of thefirst end portion, wherein the second end portion is configured toreceive electrical signals and transmit the signals to at least thefirst integrated circuit of the first die and the second integratedcircuit of the second die.